发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURING PRAM USING THE SAME |
摘要 |
<p>The method of manufacturing the semiconductor diode is provide to reduce the generation of defects including the processing defection, the thermal stress etc. A step is for forming the first amorphous thin film(12a) having the first impurity on the single crystal substrate(10). A step is for forming the second amorphous thin film(12b) having the second impurity on the first amorphous thin film. A step is for forming the first amorphous thin film and the second amorphous thin film as the first single crystal thin film and the second single crystal thin film when the laser beam(14) is investigated and the phase change of the second amorphous thin film and the first amorphous thin film occurs.</p> |
申请公布号 |
KR100869235(B1) |
申请公布日期 |
2008.11.18 |
申请号 |
KR20070050609 |
申请日期 |
2007.05.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON, YONG HOON;CHOI, SI YOUNG;LEE, JONG WOOK |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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