发明名称 NANO IMPRINT LITHOGRAPHY
摘要 <p>The imprint temperature can be drastically lowered by using the imprint resist as the thermoplastic polymer which has a very low glass transition temperature. A step is for coating the PBMA resist layer on the substrate(11) by spin-coating the PBMA resist liquid having the PBMA. A step is for forming the PBMA pattern on the substrate by imprinting the pattern on the PBMA resist layer using the stamp having the predetermined pattern. In the nano imprint process, the imprint resist is the thermoplastic polymer whose the glass transition temperature is 5~60 deg C. The nano imprint process can reduce the existing imprint temperature of 200 deg C to 100 deg C or less.</p>
申请公布号 KR100869311(B1) 申请公布日期 2008.11.18
申请号 KR20070061521 申请日期 2007.06.22
申请人 KOREA UNIVERSITY INDUSTRIAL & ACADEMIC COLLABORATION FOUNDATION 发明人 LEE, HEON;YANG, KI YEON
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址