发明名称 Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof
摘要 The resist composition of the present invention contains at least one of a tannin and a derivative thereof. The method of forming a resist pattern of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; and exposing and developing the resist film. The method of manufacturing a semiconductor device of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; exposing and developing the resist film to form a resist pattern; and patterning the surface of the object by performing an etching through the resist pattern as a mask.
申请公布号 US7452657(B2) 申请公布日期 2008.11.18
申请号 US20050237951 申请日期 2005.09.29
申请人 FUJITSU LIMITED 发明人 NAMIKI TAKAHISA;NOZAKI KOJI;KOZAWA MIWA
分类号 G03F7/004;G03F7/30 主分类号 G03F7/004
代理机构 代理人
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