发明名称 |
Resist composition, method of forming resist pattern, semiconductor device and method of manufacturing thereof |
摘要 |
The resist composition of the present invention contains at least one of a tannin and a derivative thereof. The method of forming a resist pattern of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; and exposing and developing the resist film. The method of manufacturing a semiconductor device of the present invention includes: forming a resist film on a surface of an object to be processed, by using the resist composition; exposing and developing the resist film to form a resist pattern; and patterning the surface of the object by performing an etching through the resist pattern as a mask.
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申请公布号 |
US7452657(B2) |
申请公布日期 |
2008.11.18 |
申请号 |
US20050237951 |
申请日期 |
2005.09.29 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAMIKI TAKAHISA;NOZAKI KOJI;KOZAWA MIWA |
分类号 |
G03F7/004;G03F7/30 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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