| 摘要 |
The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features ( 405, 410, 415, 420, 425, 430, 435, 440, 445 ) over a substrate ( 310 ), and then forming a layer of material ( 510 ) over the semiconductor features ( 405, 410, 415, 420, 425, 430, 435, 440, 445 ). This method further includes selectively etching portions of the layer of material ( 510 ) based upon a density or size of the semiconductor features ( 405, 410, 415, 420, 425, 430, 435, 440, 445 ) located thereunder, and then polishing remaining portions of the layer of material ( 510 ).
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