SEMICONDUCTOR LAYER FOR THIN FILM TRANSISTOR

摘要

A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying th e solution to a substrate; and heating the solution to form a semiconductor layer on th e substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio.