发明名称 SPIRALFÖRMIGER PARALLEL GESTAPELTE SPULE AUF EINEM HALBLEITERMATERIAL
摘要 A parallel spiral stacked inductor [100] and manufacturing method therefore is provided. A substrate [112] has a plurality of turns [124,124',126,126'] in a plurality of levels, the plurality of turns [124,124',126,126'] having a center proximate and a center distal ends. First vias [132v] connecting the center proximate ends of the plurality of turns [124,124',126,126'] and second vias [133] connecting the center distal ends of the plurality of turns [124,124',126,126']. A first connecting portion [130] connects to the center proximate ends of the plurality of turns [124,124',126,126'] and a second connecting portion [134] connecting to the center distal end of the plurality of turns [124,124',126,126']. A dielectric material [114,116,118,120] contains the inductor [122].
申请公布号 AT412975(T) 申请公布日期 2008.11.15
申请号 AT20030252207T 申请日期 2003.04.08
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 SIA, CHOON-BENG;SWE, TOE NAING;SEE, ALEX;YEO, KIAT SENG;NG, CHEN YEOW
分类号 H01L27/08;H01F17/00;H01L21/02;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L27/08
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