NONVOLATILE SEMI-CONDUCTOR MEMORY DEVICE AND WIRTE OPERATION METHOD OF THE NONVOLATILE SEMI-CONDUCTOR MEMORY DEVICE

摘要

A nonvolatile semi-conductor memory device and writing operation method is provided to use a page buffer, so there is no need for a user to select the address to be used in writing operation. A nonvolatile semiconductor memory device(100) includes a cell array(130) and a controller(110) receiving data inputted from outside. An address latch unit(120) stores Y-address of input data and two or more X-address to be used for writing the input data based on the address of input data outputted from controller. A page buffer(140) receives input data from the controller and temporarily stores received data.