| 摘要 |
<p>Phase or the transmittance return value can be maintained with the good value by preventing a pattern damage on a mask by protecting a lower material layer in a repair process for removing an expandability deformity. Provided is the mask formation method of the semiconductor device. A step is for forming the phase shift layer(102) on the transparent substrate(100) and light shield layer. A step is for forming the light block film pattern which partly exposes the surface of the phase shift layer by patterning the light shield layer. A step is for detecting the expandability deformity generated in formation of light block film pattern. A step is for forming the photoresist film(110) which removes the photoacid generator for filling the expandability deformity and the detected light shield layer. A step is for exposing the light block film pattern by the photolithography using the photoresist film. A step is for removing the expandability deformity by performing the repair process on the light block film pattern. A step is for removing the photoresist film.</p> |
