METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Because the convex part formed on a semiconductor substrate can be separated, the exfoliation of the SOI layer can be prevented according to the contraction of the supporting substrate by heating. Moreover, because the successive vulnerable layer is formed in the convex part of the semiconductor substrate, the SOI layer of the predetermined thickness can be formed on the supporting substrate. The method of manufacturing the semiconductor device is provided. A step is for forming the groove in a part of the semiconductor substrate(101). A step is forming the vulnerable area having the porous structure in the depth which is near to the mean depth of the ion from 1 surface of the semiconductor substrate by irradiating the ion consisting of 1 or a plurality of atoms to the first surface of the semiconductor substrate. A step is for forming the silicon oxide layer in 1 surface of the semiconductor substrate. A step is for adhering the silicon oxide layer and substrate having and insulating surface and heating them. A step is for forming a semiconductor layer on the substrate having the insulating surface by separating the semiconductor substrate from the vulnerable area and by cracking the vulnerable area. A step is for forming the semiconductor device using the semiconductor layer.