IMPROVING ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STEO

摘要

A method for depositing the capping layer and the apparatus for strengthening the adhesive force between the capping layer and dielectric layer are provided. The method for treating a semi-conductor substrate is provided. The step is for depositing the capping layer including the cobalt on the conducting material formed on the substrate. A step is for annealing the capping layer(102). A step is for depositing the adhesion promoting layer on the capping layer(104). A step is for depositing the bulk dielectric material on the adhesion promoting layer. A step for depositing adhesion promoting layer comprises as follows. A step is for heating substrate to exceed 100 °C. A step is for exposing capping layer to the silicon-containing free cursor. A step is for igniting plasma. A step is for exposing the substrate to oxidizer.