NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The coupling generation between the floating gates can be prevented while the non-volatile memory device is driven. Therefore, the coupling ratio of the non-volatile memory device can be increased. The non-volatile memory device comprises a substrate having the element isolation region and active area; conductive patterns arranged on the active area in the grid type; a shielding line which is extended along the element isolation region, interposed between conductive patterns; a first line intersecting with the shielding line, overlapped with conductive patterns; a second line electrically connected to the shielding line, separated from the first line; a dielectric layer between the lower surface of the first line and conductive patterns.