| 摘要 |
<p>The upper electrode having thin thickness can be formed due to the formation of the sub bit-line. Therefore, the patterning process time of the phase changing film and upper electrode can be reduced. The phase change memory device comprises as follows. The semiconductor substrate(100) has active areas(101) of a plurality of bar type in which the silicide film is formed in the base region and emitter region, including the base region and emitter region. The first contact plug(121) is formed on the base region and emitter region of the active area. The heater(130) is formed on the first contact plug of the emitter region. The laminate pattern consists of the upper electrode(150) and the phase changing film contacting heater. The second contact plug(122) is formed on the upper electrode. The sub bit-line(160) is formed in order to contact the second contact plug arranged in the active area on two pairs of active are in the vertical direction to the active region. The third contact plug(123) is formed on the first contact plug of the base region. The word line(170) is formed in order to contact the third contact plug arranged in the direction of the active area. The fourth contact plug(124) is formed on the sub bit-line between the active areas located in the second interval.</p> |
