| 摘要 |
The required beam diameter can be obtained without the influence caused by a difference of irradiation angle of the laser beam. Therefore, it can be prevented that the irradiation condition of the laser beam is changed before or after exchanging the semiconductor laser. In the irradiation equipment for irradiating the outgoing beam light from the semiconductor laser, setting a beam radius(W) of the passive investigated material, a rate(Delta) of difference of irradiation angle' spreading, a beam wavelength(lambda) of the semiconductor laser, the focal position is defocused to equal a desired value by the determined operation equation using w, z, and Delta with a distance(z) from a focus position of the illumination optical system between the passive investigated material and the semiconductor laser to the passive investigated material.
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