| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a high breakdown voltage semiconductor device capable of improving on-voltage while maintaining a breakdown voltage, in IGBT. SOLUTION: Comparing the impurity concentration of a first conductive-type deep well diffusion layer formed at the lower part of a second conductive-type drift diffusion layer positioned in the surface region of an active layer with that of a first conductive-type deep well diffusion layer formed on the side near an emitter diffusion layer, the concentration of the first conductive-type deep well diffusion layer formed on the side near a collector diffusion layer is formed in higher concentration. Thus, the transportation efficiency of carriers passing the first conductive-type deep well diffusion layer is improved, thus realizing a reduced on-voltage. COPYRIGHT: (C)2009,JPO&INPIT
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