| 摘要 |
PROBLEM TO BE SOLVED: To provide a semi-insulating GaAs wafer capable of reducing the rate of occurrence of defectives after treatment and to provide a method for producing the same. SOLUTION: In a semi-insulating GaAs wafer having a diameterΦnot smaller than 4 inches, provided that R is the wafer radius and a circle part having a radius of (2/3)*R from the wafer center is the center part, the average dislocation density of the outer peripheral part that is the part other than the center part in the plane of the wafer is larger than the average dislocation density of the center part. COPYRIGHT: (C)2009,JPO&INPIT
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