| 摘要 |
<p>An 'U' type pin having the ledge in the specified region within substrate is formed. Therefore, the channel length is increased and the refresh property of the semiconductor device can be improved. The element isolation film is pulled back through the etching process using the spacer scheme. The length and area of channel is controlled by controlling the channel length. Provided is the transistor having many sides channel. An 'U' type pin(105) is formed in the specified region within the active area of the substrate(100) having the ledge. A gate insulating layer(106) is formed along the shape of the pin. And the gate electrode is formed on the gate insulating layer(109). The pin has the opening width of the lower part that becomes narrow than the opening width of the upper part in boundary ledge.</p> |
