METHOD OF FABRICATING PHASE CHANGE MEMORY DEVICE HAVING SELF-ALIGNED ELECTRODE, RELATED DEVICE AND ELECTRONIC SYSTEM

摘要

The damage of phase transition pattern can be prevented even if the alignment error caused by photolithography is generated while forming the bit line. Also, the high integration can be easily achieved. The manufacturing method of the memory device having the self-aligned electrode is provided. The interlayer insulating film(57) having the contact hole(57H) on the substrate(51) is formed. The phase transition pattern which partly fills the contact hole is formed. The bit line(93) which passes across the interlayer insulating film phase is formed, including the bit extension part(93E) self-aligned in the phase transition pattern. The bit extension part can be extended inside the contact hole on the phase transition pattern. The bit extension part is contacted with the phase transition pattern.