| 摘要 |
PROBLEM TO BE SOLVED: To obtain the annealing time sufficient for recovering crystallinity of a part where ions are implanted and reducing the junction depth, without having to use many laser light sources, when forming a very shallow junction. SOLUTION: A pulse laser beam 1 is oscillated in a pulse laser oscillator 12, a surface layer part where the ions are implanted is irradiated with the pulse laser beam 1, on the condition of not melting the surface layer, and the surface layer part is heated by an auxiliary heating means 19, at least until 1 microsecond elapses from the time of starting each irradiation, at every irradiation with the pulse laser beam 1 in parallel with the irradiation with the pulse laser beam 1. COPYRIGHT: (C)2009,JPO&INPIT
|
