| 摘要 |
A method of manufacturing a semiconductor device including heating a semiconductor substrate, has forming a cap film on a surface of said semiconductor substrate; selectively removing said cap film at least from an upper surface of an edge of said semiconductor substrate, a bevel surface of the edge of said semiconductor substrate and a side surface of the edge of said semiconductor substrate; selectively removing at least a device forming film formed on the upper surface of the edge of said semiconductor substrate, the bevel surface of the edge of said semiconductor substrate and the side surface of the edge of said semiconductor substrate; and heating said semiconductor substrate by irradiating said semiconductor substrate with light having a pulse width of 0.1 milliseconds to 100 milliseconds from a light source after removing said device forming film, wherein said cap film has a lower reflectance at a peak wavelength of said light than said semiconductor substrate.
|
