发明名称 Plasma Processor
摘要 This invention includes a first filter ( 27 ) connected between a susceptor ( 21 ) and ground and having a variable impedance, a sensor ( 28 ) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber ( 11 ), and a control means ( 36 ) for controlling the impedance of the first filter ( 27 ) on the basis of a detection result output from the sensor ( 28 ). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.
申请公布号 US2008277062(A1) 申请公布日期 2008.11.13
申请号 US20080176501 申请日期 2008.07.21
申请人 TOKYO ELECTRON LIMITED 发明人 KOSHIMIZU CHISHIO;YAMAZAWA YOHEI
分类号 H01L21/3065;H05H1/00;B01J19/08;C23C16/509;H01J37/32;H01L21/205;H01L21/30;H01L21/302;H01L21/31;H05H1/46 主分类号 H01L21/3065
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