| 发明名称 |
TRANSISTOR PROVIDING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF FABRICATION THEREOF |
| 摘要 |
<p>A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.</p> |
| 申请公布号 |
WO2008137292(A1) |
申请公布日期 |
2008.11.13 |
| 申请号 |
WO2008US60980 |
申请日期 |
2008.04.21 |
| 申请人 |
DSM SOLUTIONS, INC.;MIN, SUNG-KI |
发明人 |
MIN, SUNG-KI |
| 分类号 |
H01L29/10;H01L21/336 |
主分类号 |
H01L29/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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