发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICES AND PROGRAM METHOD THEREOF
摘要 A nonvolatile semiconductor memory devices and program method thereof is provided to improve program speed by omitting pass / fail inspection section to a certain program loop. In programming a flash memory, a memory cell is programmed through repeat program loop and some of the program loops are composed of program running and verification reading section and the others are composed of program running, verification reading, determination section. Some of the program loops includes discrimination section at first program loop selectively.
申请公布号 KR20080099691(A) 申请公布日期 2008.11.13
申请号 KR20070045566 申请日期 2007.05.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, JIN SUNG;KWAK, DONG HUN
分类号 G11C16/10;G11C16/02 主分类号 G11C16/10
代理机构 代理人
主权项
地址