| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the internal quantum efficiency and the external quantum efficiency of a light-emitting element, to provide the light-emitting element that is low in power consumption, high in emission efficiency, and uniform in light distribution characteristics. <P>SOLUTION: A light-emitting diode includes a substrate 1 which is transparent to light having an emission wavelength and has irregularities on the back face of the substrate 1, a first reflective layer (n-side reflective layer) 2 formed on the main surface of the substrate 1, an n-type group III nitride semiconductor layer 3, a light-emitting layer 4, and a p-type group III nitride semiconductor layer 5 that are formed on the reflective layer 2, and a second reflective layer (p side reflective layer) 6 formed on the p-type group III nitride semiconductor layer 5. The n-side reflective layer 2 and a p-side reflective layer 6 between which the light-emitting layer 4 is formed form an optical resonator (with a length L) in which the light-emitting layer 4 is located at the belly of a standing wave formed in the optical resonator to select and extract only resonance mode light. The irregularities formed on the back face of the substrate 1 scatter and diffuse the light of the standing wave (extracted light) to obtain uniform light distribution characteristics. <P>COPYRIGHT: (C)2009,JPO&INPIT |
