| 摘要 |
1,227,090. Magnetic storage devices. THOMSON-CSF. 24 July, 1969 [25 July, 1968], No. 37350/69. Heading H3B. In a method of making a magnetic storage device, Fig. 4, successive layers of copper 12, permalloy 1, and copper 13 are deposited on a layer of varnish on a glass substrate 10, the permalloy being electrodeposited as a toroidal element centred on a hole formed by photoengraving after vacuum deposition of layer 12. The substrate is removed by dissolving the varnish, and a gold conductor 2, Fig. 7, is formed electrolytically to pass through the hole, and then parts of the initial copper layers of Fig. 4 are etched down to the torroid so that the torroid may be secured to the gold conductor by insulating material 15. The remaining copper is then dissolved and replaced by an insulating layer 17 which enters the structure by capillary action. More than one gold conductor may pass through the hole, and devices of different speeds may be made according to the thickness of magnetic material used. |
