| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electronic element using a semiconductor film comprising a wurtzite type crystal having excellent carrier mobility and having excellent electric property, and to provide a method of manufacturing the electronic element. <P>SOLUTION: An electronic element 10 comprises a projection 13, a semiconductor film 14 comprising ZnO, which is a wurtzite type crystal, a gate insulating film 18, a gate electrode 31, and a protective film 20. The force of pulling to the outside of the film is applied to the ZnO film 14 by the projection 13. This allows the c axis length of the ZnO crystal of the ZnO film 14 to extend and the an axis length to be shortened, and therefore improves the carrier mobility of the ZnO film 14. Further, the ZnO film 14 has a compressive residual stress. The gate insulating film 18, the gate electrode 31, and the protective film 20 have a compressive stress, respectively. Therefore, the force of pulling to the outside of the film is further applied to the ZnO film 14, and the carrier mobility of the ZnO film 14 can be improved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
