QUARTZ CRYSTAL THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a quartz single crystal thin film excellent in cyrstallinity and optical characteristics.

SOLUTION: On the surface of a substrate 5, a buffer layer of an amorphous crystal is deposited using a substance forming a hexagonal crystal. One or a plurality of silicon alkoxides chosen from the group consisting of tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane and tetrabutoxysilane is used as a silicon source, the silicon source is vaporized and introduced at atmospheric pressure, and the introduced silicon source is reacted with oxygen O2to be epitaxially grown on the buffer layer.

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