| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid composition capable of yielding a polished surface of high surface flatness by polishing within a short period of time, and a method of polishing and method of manufacturing semiconductor devices using the same. <P>SOLUTION: The polishing liquid composition comprises particles of a composite oxide comprising cerium and zirconium, a dispersing agent, a water-soluble organic compound, and an aqueous medium. The powder X-ray diffraction spectra obtained by irradiating the composite oxide particles with CuKα1 ray (λ=0.154050 nm) shows a first peak having a peak top lying within a diffraction angle 2θ(θis a Bragg angle) region of 28.61 to 29.67°, a second peak having a peak top lying within a range of diffraction angle 2θregion of 33.14 to 34.53°, a third peak having a peal top lying within a range of diffraction angle 2θregion of 47.57 to 49.63°, and a fourth peak having a peak top lying within a range of diffraction angle 2θregion of 56.45 to 58.91°. The half-width of the first peak is 0.8°or less. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
