A SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

The uniformity of pattern can be more improved by forming the dummy pattern in the direction of the main pattern. Therefore, the uniformity of the CD(Critical Diameter) of each pattern can be obtained. The semiconductor device comprises a first main pattern(104) formed on the substrate; And the first main pattern in the layer in which the first main pattern is formed; The first dummy pattern(105) formed in parallel; the second main pattern in vertical direction, formed in the different layer from the layer of the first main pattern; the second dummy pattern in a parallel direction with the second main pattern.