发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 <p>The photoresist pattern having crust is easily stripped by using the O3 vapor and then deformity caused by the residue of the photoresist pattern can be solved. The photoresist strip equipment has the chamber of 4. If it classifies according to the big part, it can divide into crust removal parts(102,103) and photoresist pattern strip parts(104,105) of the photoresist pattern. Parts(101,106) for loading/unloading the wafer in the apparatus is included. The crust removal part of the photoresist pattern is classified into the chamber(102) for treating the O3 vapor and the crust removal chamber(103). The photoresist pattern strip part is classified into the chamber(104) stripping the photoresist pattern and the chamber(105) removing the residue of the photoresist pattern.</p>
申请公布号 KR20080099729(A) 申请公布日期 2008.11.13
申请号 KR20070045651 申请日期 2007.05.10
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, YOUNG KYUN
分类号 H01L21/027 主分类号 H01L21/027
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