NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To improve the luminance by forming a high-quality nitride semiconductor and reducing light absorption by a silicon substrate in a nitride semiconductor light-emitting element that uses the silicon substrate.

SOLUTION: The nitride semiconductor light-emitting element comprises a substrate 1 made of silicon; a mask film 2 which is formed on the principal plane of the substrate 1 and has a plurality of opening portions 2a; an n-type GaN layer 4 which is crystal-grown, laterally from each opening portion 2a on the mask film 2; and an active layer 5 and a p-type GaN layer 6, which are formed on the n-type GaN layer 4 and provide light emission. The reflectivity of the mask film 2 is larger than that of the substrate 1, at a light emission wavelength from the active layer 5.

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