| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve polishing efficiency, reducing a running cost, and improve yield, by eliminating variation in residual film thickness of a wafer. <P>SOLUTION: A CMP apparatus 1 consists of a polishing recipe generating means 3 for generating an optimum polishing condition for polishing speed, polishing pressure, abrasives or the like of a wafer, a residual film thickness predicting means 4 which predicts a residual film thickness after polishing of the wafer polished under the polishing condition, a residual film thickness measuring unit 2 for measuring the residual film thickness of the wafer after polishing, and a computer 6 for controlling polishing the condition based on the measuring result of residual film thickness. The computer 6 comprises a calculation part 11 which calculates a difference between the measurement value of the residual film thickness and the predicted value, and a polishing condition correcting/changing part 13 which corrects/changes the polishing condition so that the calculated difference becomes minimum. Thus, correction/change of the polishing condition is performed in real time. <P>COPYRIGHT: (C)2009,JPO&INPIT |
