| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor and an element having excellent characteristics in an amorphous oxide semiconductor in which the composition ratios of In, Ga and Zn are expressed by In<SB>x</SB>Ga<SB>y</SB>Zn<SB>z</SB>, a semiconductor device and a thin-film transistor. <P>SOLUTION: In the amorphous oxide semiconductor in which the composition ratios of In, Ga and Zn are expressed by In<SB>x</SB>Ga<SB>y</SB>Zn<SB>z</SB>, its density (mass per unit volume) is not less than 0.94×(7.121x+5.941y+5.675z)/(x+y+z). <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
