| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of improving reliability in a semiconductor integrated circuit device having not less than two kinds of gate-insulating films each having a different thickness. SOLUTION: A silicon oxide film 7 is formed on an upper layer of a silicon oxide film 6 formed on the surface of a semiconductor substrate 1. The silicon oxide films 6, 7 in a region B where a thin gate-insulating film is formed are removed with a photoresist pattern 8 covering a region A where a thick gate-insulating film is formed as a mask. Then, the photoresist pattern 8 and the silicon oxide film 7 are removed, and the semiconductor substrate 1 is heat-oxidized, thus forming the gate-insulating films each having a different thickness. COPYRIGHT: (C)2009,JPO&INPIT
|
