发明名称 |
Beam Homogenizer, and Laser Irradiation Method, Laser Irradiation Apparatus, and Laser Annealing Method of Non-Single Crystalline Semiconductor Film Using the Same |
摘要 |
A rectangular beam having the energy density distribution homogenized in its short-side direction is formed in a beam homogenizer wherein two light reflection surfaces are parallel-provided in a beam progression optical waveguide with a predetermined space so as to face each other at surfaces along the beam progression direction and a course change reflection surface for changing the beam progression direction is formed at a surface in the direction intersected with the light reflection surfaces. The beam enters a cylindrical lens array and a cylindrical lens sequentially to homogenize the energy density distribution in its long-side direction. Then, the irradiation laser from the cylindrical lens is projected onto a non-single crystalline semiconductor film to perform annealing.
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申请公布号 |
US2008280425(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
US20050664054 |
申请日期 |
2005.10.18 |
申请人 |
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发明人 |
TANAKA KOICHIRO;OMATA TAKATSUGU |
分类号 |
H01L21/20;G02B6/10;H01S3/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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