发明名称 |
Method of forming a fine pattern of a semiconductor device using a resist reflow measurement key |
摘要 |
In a resist reflow measurement key, and method of fabricating a fine pattern of a semiconductor device using the same, the resist reflow measurement key includes a first reflow key including a plurality of first pattern elements each having a first pattern with a first radius of curvature located on a first side of a first center line and a second pattern with a second radius of curvature located on a second side of the first center line, and a second reflow key including a plurality of second pattern elements each having a third pattern with a third radius of curvature located on a first side of a second center line and a fourth pattern with a fourth radius of curvature located on a second side of the second center line, the second reflow key being formed on a same plane of a substrate as the first reflow key.
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申请公布号 |
US2008280381(A1) |
申请公布日期 |
2008.11.13 |
申请号 |
US20080219214 |
申请日期 |
2008.07.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DOO-YOUL;YEO GI-SUNG;CHO HAN-KU;LEE JUNG-HYEON |
分类号 |
H01L21/66;G03C5/00;G03F7/40;H01L21/027;H01L21/3205;H01L21/4763;H01L23/544 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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