| 发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress poor connection and an increase in contact resistance even if forming an antenna on an integrated circuit section. <P>SOLUTION: The integrated circuit section having a first conductive film is formed on a substrate. An insulating film is formed on the integrated circuit section. A second conductive film functioning as the antenna is formed on the insulating film selectively. An opening is formed in the insulating film and the second conductive film to expose the first conductive film. A third conductive film is formed at the opening and on the upper surface of the second conductive film by plating treatment to connect the first conductive film to the second one electrically. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
| 申请公布号 |
JP2008277798(A) |
申请公布日期 |
2008.11.13 |
| 申请号 |
JP20080094894 |
申请日期 |
2008.04.01 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI |
| 分类号 |
H01L21/768;G06K19/07;G06K19/077;H01L21/3205;H01L21/822;H01L23/52;H01L23/522;H01L27/04;H01L29/417;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/768 |
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