METHOD FOR FABRICATING CAPACITOR WITH HIGH ASPECT RATIO

摘要

The height of the bottom electrode can be enhanced by reducing the etch burden according to the aspect ratio by several times of etching process. The capacitance of capacitor can be increased. Provided is the capacitor manufacturing method. A step is for forming the first separation insulating layer at the upper part of the substrate(21) in which the storage node contact(23) is formed. A step is for forming the first pattern by etching the first isolation insulating layer. A step is for forming the first bottom electrode(27) to fill the first pattern. A step is for forming the second isolation insulating layer on the first bottom electrode. A step is for forming the second pattern for opening the surface of the first bottom electrode by etching the second isolation insulating layer. A step is for forming the second bottom electrode(30) perpendicularly connected with the first bottom electrode by filling the second pattern. A step is for removing the second isolation insulating layer and the first separation insulating layer.