| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing bad contact connection on a main electrode region of a transistor and a bad contact connection on a control electrode. SOLUTION: The semiconductor device (ferroelectric memory device 1) includes a transistor 3 and a ferroelectric capacitor 8. In an interlayer insulating film 4 between a control electrode 32 of the transistor 3 and a barrier film (hydrogen barrier film) 10 that covers the ferroelectric capacitor 8, the height of a third plug 5(3) on a control electrode 32 from an upper surface substrate 2 is set higher than that of a second plug 5(2) on a second main electrode region 34(2) from the upper surface substrate 2. COPYRIGHT: (C)2009,JPO&INPIT
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