发明名称 Field Effect Transistor and Method of Producing Same
摘要 A field effect transistor is provided which comprises an organic semiconductor layer comprising a compound having a monobenzoporphyrin skeleton represented by the general formula (1): wherein R<SUB>1 </SUB>and R<SUB>2 </SUB>are independently selected from the group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, and alkyl, alkenyl, oxyalkyl, thioalkyl, alkyl ester and aryl groups each having 1 to 12 carbon atoms with the proviso that adjacent R<SUB>1 </SUB>may be the same or different and adjacent R<SUB>2 </SUB>may be the same or different and that at least two of R<SUB>2 </SUB>are not hydrogen atoms; R<SUB>3 </SUB>is a hydrogen atom or an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
申请公布号 US2008277649(A1) 申请公布日期 2008.11.13
申请号 US20050583126 申请日期 2005.03.16
申请人 CANON KABUSHIKI KAISHA 发明人 MASUMOTO AKANE;MIURA DAISUKE;NAKAYAMA TOMONARI
分类号 C07D487/22;H01L51/30;C07F1/08;H01L29/786;H01L51/00;H01L51/05;H01L51/40 主分类号 C07D487/22
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