| 摘要 |
A PMOS transistor and a method for fabricating a PMOS transistor. The method may include providing a semiconductor wafer having a PMOS transistor gate stack, source/drain extension regions, and active regions. The method may also include forming epi sidewalls, performing a ex-situ recess etch, and performing an in-situ recess etch. The ex-situ recess etch and the in-situ recess etch form recessed active regions. The PMOS transistor is formed by a method using ex-situ and in-situ etch and has epitaxial SiGe regions with a greatest width at the surface of the semiconductor wafer.
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