METHOD OF FORMING INSULATING FILM

摘要

PROBLEM TO BE SOLVED: To solve the problem that it has been extremely difficult to form a thin base film directly on a substrate for an electronic device while controlling a film deposition rate or in-plane uniformity by using conventional thermal oxidation technology or conventional plasma oxidation technology. SOLUTION: By irradiating the plasma derived from a process gas which at least contains a gas having an oxygen atom on a surface of an insulating film set on the substrate for the electronic device, the base film is formed in an interface between the insulating film and the substrate for the electronic device. Thus, the base film of good quality for improving a property of the insulating film is obtained in the interface between the insulating film and the substrate for the electronic device. COPYRIGHT: (C)2009,JPO&INPIT