| 摘要 |
The characteristic deterioration of device can be prevented by removing charges using corona of the substrate surface after the substrate processing process using plasma. Provided is the manufacturing method of the semiconductor device. A step is for loading a substrate within the chamber. A step is for performing the substrate by generating the plasma within the chamber. A step is for generating the corona within the chamber. The photosensitive film removing formed in the substrate surface, or the substrate is washed, or the process of injecting the ion into substrate is performed.
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