| 摘要 |
The processing procedure is simplified and the thermal dissipation is facilitated by forming a partial silicon-on-insulation structure in which the buried insulating layer is formed in a part of the semiconductor substrate. The manufacturing method of the semiconductor device is provided. A step is for forming the recess by etching selectively the SOI region of the semiconductor substrate(20). A step is for forming the buried insulating layer(24A) to fill a part of the recess. A step is for forming the epitaxial layer(25) which fill the rest of the recess on the buried insulating layer by performing an epitaxial growth processes.
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