| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for more accurately correcting a dimension change generated in a semiconductor manufacturing process. <P>SOLUTION: A correction procedure includes steps (S102 to S108) of calculating a correction amount for correcting a critical dimension error by using an area and a total length of sides of a perimeter of the pattern included in each grid region of a plurality of mesh-like grid regions prepared by virtually dividing a pattern creation region of an exposure mask. A mask forming process includes a step (S202) of exposing a substrate coated with a resist film to transfer the pattern whose dimension has been corrected by the correction amount, a step (S204) of developing the resist film after the exposure, and steps (S206 to S210) of processing the substrate by using a resist pattern after the development. <P>COPYRIGHT: (C)2009,JPO&INPIT |
