发明名称 LITHOGRAPHIC DATA CREATION METHOD, CHARGED PARTICLE BEAM LITHOGRAPHY SYSTEM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND LITHOGRAPHY METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography system capable of drawing a chip pattern while varying shot conditions of a specific pattern included in one piece of lithographic data of the chip pattern. <P>SOLUTION: The charged particle beam lithography system includes a lithographic data storage part 25 for storing the lithographic data of a chip pattern including a partial pattern marked with a specific flag, a lithography condition storage part 26 for storing a plurality of resizing quantities of the partial pattern marked with the specific flag, and a charged particle beam irradiation mechanism 230 for drawing the chip pattern defined by the lithographic data while varying the size of the partial pattern marked with the specific flag according to each of the plurality of resizing quantities. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008277540(A) 申请公布日期 2008.11.13
申请号 JP20070119328 申请日期 2007.04.27
申请人 TOSHIBA CORP 发明人 NAKASUGI TETSUO;WATANABE YUMI;INENAMI RYOICHI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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