发明名称 |
METHOD FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern having a sufficiently-high water-shedding property required in a liquid immesion exposure and a suppressive effect for an exfoliation of a film, and to provide a semiconductor device manufactured by the method. <P>SOLUTION: The embodiment of this invention comprises the steps of arranging an objective lens on a substrate of the semiconductor device with a film to be processed; and forming the resist pattern by the liquid immersion exposure for forming the liquid film between the objective lens and the substrate to exposure. The substrate processed by a water-shedding chemical comprising at least the water shedding agent and the solvent is exposed. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2008277748(A) |
申请公布日期 |
2008.11.13 |
申请号 |
JP20080021604 |
申请日期 |
2008.01.31 |
申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
ISHIBASHI TAKEO;TERAI MAMORU;HAGIWARA TAKUYA;YAMAGUCHI ATSUMI |
分类号 |
H01L21/027;G03F7/20;G03F7/38 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|