发明名称 METHOD FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern having a sufficiently-high water-shedding property required in a liquid immesion exposure and a suppressive effect for an exfoliation of a film, and to provide a semiconductor device manufactured by the method. <P>SOLUTION: The embodiment of this invention comprises the steps of arranging an objective lens on a substrate of the semiconductor device with a film to be processed; and forming the resist pattern by the liquid immersion exposure for forming the liquid film between the objective lens and the substrate to exposure. The substrate processed by a water-shedding chemical comprising at least the water shedding agent and the solvent is exposed. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008277748(A) 申请公布日期 2008.11.13
申请号 JP20080021604 申请日期 2008.01.31
申请人 RENESAS TECHNOLOGY CORP 发明人 ISHIBASHI TAKEO;TERAI MAMORU;HAGIWARA TAKUYA;YAMAGUCHI ATSUMI
分类号 H01L21/027;G03F7/20;G03F7/38 主分类号 H01L21/027
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