| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of driving a light-emitting diode, by which change of light emission wavelength, due to the current density of a driving current, can be reduced to 10 nm or less, and to provide a method of driving a display device, a method of driving an electronic instrument, and a method of driving optical communication equipment. <P>SOLUTION: The light-emitting diode is configured that a light emitting layer 11 is sandwiched between an n-type layer 12 and a p-type layer 13, the light emitting layer 11 having a quantum well structure which contains In. The light emitting layer 11, the n-type layer 12, and the p-type layer 13 are each composed of a GaN based compound semiconductor crystal having wurtzite structure. The light emitting layer 11 is composed of a multiple quantum well structure in which an AlGaInN layer serves as the quantum well layer and a barrier layer. The principal plane of the light emitting layer 11 inclines 0.3 degrees or more and 2 degrees or less, from a plane C. An current density of 20 A/cm<SP>2</SP>or less is applied in order to perform the intensity modulation of the light-emitting diode whose light emission wavelength is in green region. <P>COPYRIGHT: (C)2009,JPO&INPIT |
