| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a thin film transistor (TFT) with a body floating structure. SOLUTION: A p-channel-type thin film transistor formed on a semiconductor film on an insulator is provided with a gate electrode (109) arranged on the semiconductor film (103) through a gate insulating film, a source region (S) and a drain region (D), which are disposed in the semiconductor films on both sides of the gate electrode, and a channel region positioned between them. Drain voltage in the channel region in a floating state is nV, where 2≤n≤20, and the gate length is not less than n×0.1μm. The semiconductor film is constituted so that it becomes a single crystal silicone film of crystal orientation ä110} or a polycrystalline silicone film oriented in ä110}. Thus, a parasitic bipolar operation can be suppressed by setting the thin film transistor formed on the insulator to be a p-channel type. Mobility of a carrier (hole) can be improved and current drive capability can be improved by controlling crystal orientation of the p-channel type thin film transistor. COPYRIGHT: (C)2009,JPO&INPIT |
