Electronic Circuit with Memory for Which a Threshold Level is Selected

摘要

A memory ( 10 ) is organized as a matrix rows and columns of memory cell circuits ( 100 ) and comprises bit line conductors ( 12 ) coupled to rows of the memory cells ( 100 ). A sensing circuit ( 14 ) is coupled to the bit line conductors ( 12 ). The sensing circuit ( 14 ) is arranged to form respective data signals, each by comparing a respective signal from a plurality of the bit line conductors ( 12 ) with a reference level that is common for the bit line conductors ( 12 ). A reference level selection circuit ( 16 ) with inputs coupled to the plurality of bit line conductors ( 12 ) is arranged to control the reference level. The reference level selection circuit ( 16 ) selects the reference level dependent on respective analog signal levels on the plurality of the bit line conductors ( 12 ), so that analog signal levels from at least respective ones of the plurality of bit line conductors ( 12 ) lie on respective sides of the reference level.