| 摘要 |
An electronic device is disclosed having a dielectric layer ( 12 ) formed at a semiconductor substrate ( 10 ). A polysilicon fuse structure ( 14 ) having a first length is formed overlying the dielectric layer ( 12 ). First and second portions ( 141, 142 ) of the polysilicon fuse structure are silicided, wherein a third portion ( 143 ) of the polysilicon fuse structure ( 114 ) that abuts the first portion ( 141 ) and the second portion ( 142 ) of the polysilicon fuse remains unsilicided.
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